| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BYX40-1000 |
Controlled avalanche diode |
mble |
| 2 |
BYX40-1000 |
Silicon avalanche rectifier diode |
Mullard |
| 3 |
BYX40-1000 |
Controlled Avalanche Rectifier Diode, normal polarity 1000V |
Philips |
| 4 |
BYX40-1000R |
Controlled avalanche diode |
mble |
| 5 |
BYX40-1000R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 6 |
BYX40-1000R |
Controlled Avalanche Rectifier Diode, reverse polarity 1000V |
Philips |
| 7 |
BYX40-600 |
Controlled avalanche diode |
mble |
| 8 |
BYX40-600 |
Silicon avalanche rectifier diode |
Mullard |
| 9 |
BYX40-600 |
Controlled Avalanche Rectifier Diode, normal polarity 600V |
Philips |
| 10 |
BYX40-600R |
Controlled avalanche diode |
mble |
| 11 |
BYX40-600R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 12 |
BYX40-600R |
Controlled Avalanche Rectifier Diode, reverse polarity 600V |
Philips |
| 13 |
BYX40-800 |
Controlled avalanche diode |
mble |
| 14 |
BYX40-800 |
Silicon avalanche rectifier diode |
Mullard |
| 15 |
BYX40-800 |
Controlled Avalanche Rectifier Diode, normal polarity 800V |
Philips |
| 16 |
BYX40-800R |
Controlled avalanche diode |
mble |
| 17 |
BYX40-800R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 18 |
BYX40-800R |
Controlled Avalanche Rectifier Diode, reverse polarity 800V |
Philips |
| 19 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 20 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 21 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 22 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 23 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 24 |
MAX40-130.0CA |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 25 |
MAX40-140.0C |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 26 |
MAX40-140.0CA |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 27 |
MAX40-150.0C |
150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 28 |
MAX40-150.0CA |
150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 29 |
TYNX40-1 |
40A SCRs |
ST Microelectronics |
| 30 |
UX40-MB-5P |
Meet requirements of USB 2.0 |
Hirose Electric |
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