| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BUXD87 |
HIGH VOLTAGE SILICON POWER TRANSISTOR |
SGS Thomson Microelectronics |
| 2 |
BUXD87 |
HIGH VOLTAGE SILICON POWER TRANSISTOR |
ST Microelectronics |
| 3 |
BUXD87DPAK |
HIGH VOLTAGE NPN POWER TRANSISTOR |
ST Microelectronics |
| 4 |
BUXD87IPAK |
HIGH VOLTAGE NPN POWER TRANSISTOR |
ST Microelectronics |
| 5 |
BUXD87T |
HIGH VOLTAGE NPN POWER TRANSISTOR |
ST Microelectronics |
| 6 |
BUXD87T4 |
HIGH VOLTAGE SILICON POWER TRANSISTOR |
ST Microelectronics |
| 7 |
CS5124XD8 |
High Performance/ Integrated Current Mode PWM Controllers |
Cherry Semiconductor |
| 8 |
CS5124XD8 |
High Performance, Integrated Current Mode PWM Controllers |
ON Semiconductor |
| 9 |
CS5124XD8 |
High Performance, Integrated Current Mode PWM Controllers |
ON Semiconductor |
| 10 |
CS5126XD8 |
High Performance/ Integrated Current Mode PWM Controllers |
Cherry Semiconductor |
| 11 |
CXD8302Q |
PLL for CCD Cameras |
SONY |
| 12 |
EYGE0912XD8D |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - PGS Graphite Sheet, SSM |
Panasonic |
| 13 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 14 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 15 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 16 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 17 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 18 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
