No. |
Part Name |
Description |
Manufacturer |
1 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
2 |
1N4150 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If |
Continental Device India Limited |
3 |
1N4151 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 50mA If |
Continental Device India Limited |
4 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
5 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
6 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
7 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
8 |
1SS239 |
Silicon epitaxial schottky barrier type diode, marking S1 |
TOSHIBA |
9 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
10 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
11 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
12 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
13 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
14 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
15 |
1SS344 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
16 |
1SS345 |
UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode |
SANYO |
17 |
1SS348 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
18 |
1SS349 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
19 |
1SS350 |
UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode |
SANYO |
20 |
1SS351 |
Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications |
SANYO |
21 |
1SS357 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
22 |
1SS367 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
23 |
1SS372 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
24 |
1SS374 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
25 |
1SS377 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
26 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
27 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
28 |
1SS385 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
29 |
1SS385F |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
30 |
1SS388 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
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