| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BXY14 |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 2 |
BXY14D |
Silicon charge storage varactors for frequency multiplication |
Siemens |
| 3 |
BXY14E |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 4 |
BXY14E |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 5 |
BXY14E |
Silicon charge storage varactors for frequency multiplication |
Siemens |
| 6 |
BXY14E |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 7 |
BXY14F |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 8 |
BXY14F |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 9 |
BXY14F |
Silicon charge storage varactors for frequency multiplication |
Siemens |
| 10 |
BXY14F |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 11 |
BXY14GA |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 12 |
BXY14GA |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 13 |
BXY14GA |
Silicon charge storage varactors for frequency multiplication |
Siemens |
| 14 |
BXY14GA |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 15 |
CXY14 |
Gallium arsenide, Gunn effect, element for the J-Band (Ku-Band) |
VALVO |
| 16 |
CXY14A |
Gunn effect diode |
mble |
| 17 |
CXY14A |
Gunn Effect Device |
Philips |
| 18 |
CXY14B |
Gunn effect diode |
mble |
| 19 |
CXY14B |
Gunn Effect Device |
Philips |
| 20 |
CXY14C |
Gunn effect diode |
mble |
| | | |
