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Datasheets for Y EM

Datasheets found :: 165
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No. Part Name Description Manufacturer
1 2N3375 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
2 2N3553 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
3 2N3632 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
4 2N4932 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
5 2N4933 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
6 40665 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
7 40666 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
8 AMH461 Hybrid - High Reliability EMI Filter International Rectifier
9 DVMN28 HIGH RELIABILITY EMI FILTER AND INPUT ATTENUATOR Delta
10 DVMN28/ML HIGH RELIABILITY EMI FILTER AND INPUT ATTENUATOR Delta
11 HEMT-3300 HEMT-3300 · T-1 3/4 670 nm High Radiant Intensity Emitter Agilent (Hewlett-Packard)
12 IKB01N120H2 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. Infineon
13 IKB03N120H2 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. Infineon
14 P2005A-08SR 3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC Alliance Semiconductor
15 P2005A-08ST 3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC Alliance Semiconductor
16 P2005A-08TR 3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC Alliance Semiconductor
17 P2005A-08TT 3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC Alliance Semiconductor
18 P2005S-08SR 3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC Alliance Semiconductor
19 P2005S-08ST 3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC Alliance Semiconductor
20 P2005S-08TR 3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC Alliance Semiconductor
21 P2005S-08TT 3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC Alliance Semiconductor
22 P2010A-08SR 3 to 5 V, 10 MHz to 35 MHz, low frequency EMI reduction IC Alliance Semiconductor
23 P2010A-08ST 3 to 5 V, 10 MHz to 35 MHz, low frequency EMI reduction IC Alliance Semiconductor
24 P2010A-08TR 3 to 5 V, 10 MHz to 35 MHz, low frequency EMI reduction IC Alliance Semiconductor
25 P2010A-08TT 3 to 5 V, 10 MHz to 35 MHz, low frequency EMI reduction IC Alliance Semiconductor
26 UPD65301 Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) NEC
27 UPD65301GA-XXX-9EU Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) NEC
28 UPD65302 Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) NEC
29 UPD65303 Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) NEC
30 UPD65304 Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) NEC


Datasheets found :: 165
Page: | 1 | 2 | 3 | 4 | 5 |



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