No. |
Part Name |
Description |
Manufacturer |
1 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
2 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
3 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
4 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
5 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
6 |
40665 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
7 |
40666 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
8 |
AMH461 |
Hybrid - High Reliability EMI Filter |
International Rectifier |
9 |
DVMN28 |
HIGH RELIABILITY EMI FILTER AND INPUT ATTENUATOR |
Delta |
10 |
DVMN28/ML |
HIGH RELIABILITY EMI FILTER AND INPUT ATTENUATOR |
Delta |
11 |
HEMT-3300 |
HEMT-3300 · T-1 3/4 670 nm High Radiant Intensity Emitter |
Agilent (Hewlett-Packard) |
12 |
IKB01N120H2 |
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. |
Infineon |
13 |
IKB03N120H2 |
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. |
Infineon |
14 |
P2005A-08SR |
3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
15 |
P2005A-08ST |
3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
16 |
P2005A-08TR |
3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
17 |
P2005A-08TT |
3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
18 |
P2005S-08SR |
3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
19 |
P2005S-08ST |
3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
20 |
P2005S-08TR |
3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
21 |
P2005S-08TT |
3.3 to 5 V, 8 MHz to 32 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
22 |
P2010A-08SR |
3 to 5 V, 10 MHz to 35 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
23 |
P2010A-08ST |
3 to 5 V, 10 MHz to 35 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
24 |
P2010A-08TR |
3 to 5 V, 10 MHz to 35 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
25 |
P2010A-08TT |
3 to 5 V, 10 MHz to 35 MHz, low frequency EMI reduction IC |
Alliance Semiconductor |
26 |
UPD65301 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
27 |
UPD65301GA-XXX-9EU |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
28 |
UPD65302 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
29 |
UPD65303 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
30 |
UPD65304 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
| | | |