| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1815 |
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) |
TOSHIBA |
| 2 |
2-2NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 3 |
2-3NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 4 |
2-4NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 5 |
2-5NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 6 |
2-6NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 7 |
2-7NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 8 |
2AS1832F |
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 9 |
2N1924 |
Low frequency germanium transistor |
COSEM |
| 10 |
2N1925 |
Low frequency germanium transistor |
COSEM |
| 11 |
2N1926 |
Low frequency germanium transistor |
COSEM |
| 12 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 13 |
2N404 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 14 |
2N404A |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 15 |
2N525 |
Low frequency germanium transistor |
COSEM |
| 16 |
2N525 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 17 |
2N526 |
Low frequency germanium transistor |
COSEM |
| 18 |
2N526 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 19 |
2N527 |
Low frequency germanium transistor |
COSEM |
| 20 |
2N527 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 21 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 22 |
2NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 23 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 24 |
2SA1162 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 25 |
2SA1163 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 26 |
2SA1434 |
PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications |
SANYO |
| 27 |
2SA1586 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 28 |
2SA1587 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 29 |
2SA1618 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 30 |
2SA1683 |
High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications |
SANYO |
| | | |
