No. |
Part Name |
Description |
Manufacturer |
1 |
828H8EY-6 |
2 X 2 8-Pole Filters |
Frequency Devices |
2 |
828L8EY-6 |
2 X 2 8-Pole Filters |
Frequency Devices |
3 |
858H8EY-6 |
2 X 4 8-Pole Filters |
Frequency Devices |
4 |
858L8EY-6 |
2 X 4 8-Pole Filters |
Frequency Devices |
5 |
BT138Y-600E |
4Q Triac |
NXP Semiconductors |
6 |
BTA410Y-600BT |
3Q Hi-Com Triac |
NXP Semiconductors |
7 |
BTA410Y-600CT |
3Q Hi-Com Triac |
NXP Semiconductors |
8 |
BTA410Y-600ET |
3Q Hi-Com Triac |
NXP Semiconductors |
9 |
BTA412Y-600B |
3Q Hi-Com Triac |
NXP Semiconductors |
10 |
BTA412Y-600C |
3Q Hi-Com Triac |
NXP Semiconductors |
11 |
BTA416Y-600B |
3Q Hi-Com Triac |
NXP Semiconductors |
12 |
BTA416Y-600C |
3Q Hi-Com Triac |
NXP Semiconductors |
13 |
CM400DY-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
14 |
CM400DY-66H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
15 |
HY-6 |
Thyratrons |
PerkinElmer Optoelectronics |
16 |
HY-60 |
Thyratrons |
PerkinElmer Optoelectronics |
17 |
HY-61 |
Thyratrons |
PerkinElmer Optoelectronics |
18 |
M41T315Y-65MH6E |
Serial Access Phantom RTC Supervisor |
ST Microelectronics |
19 |
M41T315Y-65MH6F |
Serial Access Phantom RTC Supervisor |
ST Microelectronics |
20 |
M41T315Y-65MH6TR |
Serial Access Phantom RTC Supervisor |
ST Microelectronics |
21 |
M41T315Y-65MQ6 |
Serial Access Phantom RTC Supervisor |
ST Microelectronics |
22 |
M41T315Y-65MQ6E |
Serial Access Phantom RTC Supervisor |
ST Microelectronics |
23 |
M41T315Y-65MQ6F |
Serial Access Phantom RTC Supervisor |
ST Microelectronics |
24 |
M41T315Y-65MQ6TR |
Serial Access Phantom RTC Supervisor |
ST Microelectronics |
25 |
MAY-60 |
10 TO 250 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
26 |
MAY-64 |
10 TO 300 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
27 |
RM400DY-66S |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
28 |
RM400DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
29 |
RM600DY-66S |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
30 |
RM600DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| | | |