| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BBY25-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 2 |
BUK7Y25-40B |
N-channel TrenchMOS standard level FET |
Nexperia |
| 3 |
BUK7Y25-40B |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
| 4 |
BUK7Y25-60E |
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
| 5 |
BUK7Y25-60E |
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
| 6 |
BUK7Y25-80E |
N-channel 80 V, 25 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
| 7 |
BUK7Y25-80E |
N-channel 80 V, 25 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
| 8 |
BUK9Y25-60E |
N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 |
Nexperia |
| 9 |
BUK9Y25-60E |
N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 |
NXP Semiconductors |
| 10 |
BUK9Y25-80E |
N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 |
Nexperia |
| 11 |
BUK9Y25-80E |
N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 |
NXP Semiconductors |
| 12 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 13 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 14 |
CFY25-20E7916 |
HiRel X-Band GaAs Low Noise/General P... |
Infineon |
| 15 |
CFY25-20P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET |
Infineon |
| 16 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 17 |
CFY25-23P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET |
Infineon |
| 18 |
CFY25-P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET |
Infineon |
| 19 |
HY25-P |
Current Transducers HY 5 to 25-P |
LEM |
| 20 |
HY25-P/SP1 |
Current Transducers HY 5 to 25-P/SP1 |
LEM |
| | | |
