No. |
Part Name |
Description |
Manufacturer |
1 |
MGY25N120 |
Insulated Gate Bipolar Transistor |
Motorola |
2 |
MGY25N120 |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
3 |
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
4 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
5 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
6 |
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
7 |
MTY25N60E |
TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
Motorola |
8 |
MTY25N60E |
OBSOLETE - Power MOSFET 25 Amps, 600 Volts |
ON Semiconductor |
9 |
MTY25N60E-D |
Power MOSFET 25 Amps, 600 Volts |
ON Semiconductor |
10 |
STY25NA60 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET |
SGS Thomson Microelectronics |
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