| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ACY41 |
Germanium P-N-P medium power transistor |
Mullard |
| 2 |
ACY41 |
Germanium Transistor |
Mullard |
| 3 |
ACY41 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 4 |
AQY410EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 5 |
AQY410EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 6 |
AQY410EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 7 |
AQY410EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 8 |
AQY410SX |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 9 |
AQY410SZ |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 10 |
AQY414 |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 11 |
AQY414EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 12 |
AQY414EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 13 |
AQY414EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 14 |
AQY414EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 15 |
AQY414S |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 16 |
AQY414SX |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 400 V, load current 100 mA. |
Matsushita Electric Works(Nais) |
| 17 |
AQY414SZ |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 400 V, load current 100 mA. |
Matsushita Electric Works(Nais) |
| 18 |
BAY41 |
Silicon planar switching diode |
Siemens |
| 19 |
BAY41 |
Silicon planar switching diode in a glass case |
Siemens |
| 20 |
BAY41 |
Silicon planar switching diodes in a glass package |
Siemens |
| 21 |
BRY41-100 |
Bi-Directional Triode Thyristor (TRIAC) |
Transitron Electronic |
| 22 |
BRY41-200 |
Bi-Directional Triode Thyristor (TRIAC) |
Transitron Electronic |
| 23 |
BRY41-300 |
Bi-Directional Triode Thyristor (TRIAC) |
Transitron Electronic |
| 24 |
BRY41-400 |
Bi-Directional Triode Thyristor (TRIAC) |
Transitron Electronic |
| 25 |
BRY41-50 |
Bi-Directional Triode Thyristor (TRIAC) |
Transitron Electronic |
| 26 |
BRY41-500 |
Bi-Directional Triode Thyristor (TRIAC) |
Transitron Electronic |
| 27 |
BRY41-600 |
Bi-Directional Triode Thyristor (TRIAC) |
Transitron Electronic |
| 28 |
BSY41 |
Silicon Transistor |
Mullard |
| 29 |
BUK7Y41-80E |
N-channel 80 V, 41 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
| 30 |
BUK7Y41-80E |
N-channel 80 V, 41 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
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