| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 2 |
2N6080 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 3 |
2N6081 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 4 |
2N6082 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 5 |
2N6083 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 6 |
2N6084 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 7 |
2N6256 |
NPN silicon RF Power transistor 0.5W 470MHz 12.5V |
Motorola |
| 8 |
2SC2558K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080190 series is also the datasheet of 2SC2558K, see the Electrical Characteristics table) |
NEC |
| 9 |
2SC2558M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080191 series is also the datasheet of 2SC2558M, see the Electrical Characteristics table) |
NEC |
| 10 |
2SC2559K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080490 series is also the datasheet of 2SC2559K, see the Electrical Characteristics table) |
NEC |
| 11 |
2SC2559M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080491 series is also the datasheet of 2SC2559M, see the Electrical Characteristics table) |
NEC |
| 12 |
2SC2850K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE081090 series is also the datasheet of 2SC2850K, see the Electrical Characteristics table) |
NEC |
| 13 |
2SC2850M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE081091 series is also the datasheet of 2SC2850M, see the Electrical Characteristics table) |
NEC |
| 14 |
2SC3282A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM082081B-12 is also the datasheet of 2SC3282A, see the Electrical Characteristics table) |
NEC |
| 15 |
2SC3283A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM084081B-12 is also the datasheet of 2SC3283A, see the Electrical Characteristics table) |
NEC |
| 16 |
2SC3541 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL130681-12 is also the datasheet of 2SC3541, see the Electrical Characteristics table) |
NEC |
| 17 |
2SC3542 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL132081-12 is also the datasheet of 2SC3542, see the Electrical Characteristics table) |
NEC |
| 18 |
BGA3012 |
1 GHz 12 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 19 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 20 |
CA3049T |
Dual high-frequency differential amplifiers up to 500MHz 12-Lead TO-5 |
RCA Solid State |
| 21 |
GS820E32AQ-5 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 22 |
GS820E32AQ-5I |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 23 |
GS820E32AT-5 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 24 |
GS820E32AT-5I |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 25 |
GS820E32Q-5 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 26 |
GS820E32Q-5I |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 27 |
GS820E32T-5 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 28 |
GS820E32T-5I |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 29 |
GS820H32AQ-5 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 30 |
GS820H32AQ-5I |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| | | |
