| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 2 |
AFE5812 |
8-Channel Ultrasound Analog Front End with Passive CW Mixer and Digital I/Q Demodulator, 0.75nV/rtHz 135-NFBGA -40 to 85 |
Texas Instruments |
| 3 |
AFE5812ZCF |
8-Channel Ultrasound Analog Front End with Passive CW Mixer and Digital I/Q Demodulator, 0.75nV/rtHz 135-NFBGA -40 to 85 |
Texas Instruments |
| 4 |
M57716M |
Silicon Bipolar Power Amplifier for 410-430 MHz 13W Digital Mobile |
Mitsubishi Electric Corporation |
| 5 |
M68772 |
Silicon MOS FET Power Amplifier, 890-915MHz 13W FM Mobile |
Mitsubishi Electric Corporation |
| 6 |
MMBZ5243B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 13.0 V. Test current 9.5 mA. |
Chenyi Electronics |
| 7 |
MRF238 |
NPN silicon RF power transistor 30W 160MHz 13.6V |
Motorola |
| 8 |
PT9785 |
SSB Power RF Transistor 100W PEP 13.5V 2-30MHz 13dB |
Motorola |
| 9 |
RA13H4047M |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 10 |
RA13H4047M-01 |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 11 |
RA13H4047M-E01 |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 12 |
SD1833 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 13 |
TCC1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 14 |
TP212 |
7.5 Volts Transistor 1.5W 88MHz 13dB Gain |
TRW |
| 15 |
TP212S |
7.5 Volts Transistor 1.5W 88MHz 13dB Gain |
TRW |
| 16 |
TP251 |
7.5 Volts Transistor 0.2W 400-512MHz 13dB Gain |
TRW |
| | | |
