| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 2 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 3 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 4 |
1N748 |
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). |
Fairchild Semiconductor |
| 5 |
1N749 |
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 6 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
| 7 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 8 |
1N752 |
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 9 |
1N753 |
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 10 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
| 11 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
| 12 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 13 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 14 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 15 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 16 |
APP NOTE |
Application Note - a 50KHz 200W Half-Bridge Switching Power Supply Using Ring Emitter Transistors |
Fujitsu Microelectronics |
| 17 |
BUZ 20 |
Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 13.5A, NL |
Infineon |
| 18 |
FSDH0265RL |
SMPS Power Switch 100kHz 20W for DVDP/STB Power, (Green) |
Fairchild Semiconductor |
| 19 |
FSDH0265RN |
SMPS Power Switch 100kHz 20W for DVDP/STB Power, (Green) |
Fairchild Semiconductor |
| 20 |
IRDCIP2021C-2 |
500kHz 20A Dual Output Out of Phase Sync Buck Converter Reference Design |
International Rectifier |
| 21 |
MHW8188A |
870 MHz 20.3 dB Gain 112–Channel GaAs CATV Amplifier Module |
Freescale (Motorola) |
| 22 |
MHW9187 |
870 MHz 20 dB Gain 132–Channel GaAs CATV Amplifier Module |
Freescale (Motorola) |
| 23 |
MHW9188 |
870 MHz 20.3 dB Gain 132–Channel GaAs CATV Amplifier Module |
Freescale (Motorola) |
| 24 |
MHW9188A |
870 MHz 20.3 dB Gain 132–Channel GaAs CATV Amplifier Module |
Freescale (Motorola) |
| 25 |
MHW9189 |
870 MHz 20.3 dB Gain 132–Channel GaAs CATV Amplifier Module |
Freescale (Motorola) |
| 26 |
MHW9189A |
870 MHz 20.3 dB Gain 132–Channel GaAs CATV Amplifier Module |
Freescale (Motorola) |
| 27 |
MHW9206 |
870 MHz 20.2 dB Gain 132–Channel GaAs CATV Amplifier Module |
Freescale (Motorola) |
| 28 |
MMBZ5250B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 20.0 V. Test current 6.2 mA. |
Chenyi Electronics |
| 29 |
MV20 |
RF Power Module 140-175MHz 20W |
TRW |
| 30 |
PT8852 |
VHF Power Transistors 11dB 50MHz 20W 12.5V |
Motorola |
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