| No. |
Part Name |
Description |
Manufacturer |
| 1 |
101 |
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER |
SGS Thomson Microelectronics |
| 2 |
101 |
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER |
ST Microelectronics |
| 3 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 4 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 5 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 6 |
2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
| 7 |
2920 |
20 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
| 8 |
2D-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
| 9 |
2D-2000M-2 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
| 10 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 11 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 12 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 13 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 14 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 15 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 16 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 17 |
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
TOSHIBA |
| 18 |
3B16 |
Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 19 |
3B16-00 |
Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 20 |
3B16-01 |
Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 21 |
3B16-CUSTOM |
Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 22 |
3B18 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 23 |
3B18-00 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 24 |
3B18-01 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 25 |
3B18-02 |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 26 |
3B18-CUSTOM |
Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Module |
Analog Devices |
| 27 |
3B30-CUSTOM |
Isolated millivolt Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 28 |
3B31-CUSTOM |
Isolated Volt Input; 3 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 29 |
3C-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
| 30 |
4D-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
| | | |
