No. |
Part Name |
Description |
Manufacturer |
1 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
2 |
BFY90 |
NPN silicon epitaxial planar RF transistor, 1.4GHz transistion frequency |
ICCE |
3 |
MAX3260 |
1GHz Transimpedance Preamplifier with 25dB Dynamic Range |
MAXIM - Dallas Semiconductor |
4 |
MAX3260C/D |
1GHz Transimpedance Preamplifier with 25dB Dynamic Range |
MAXIM - Dallas Semiconductor |
5 |
OPA2381AIDGKR |
Precision/ Low Power/ 18MHz Transimpedance Amplifier |
Burr Brown |
6 |
OPA2381AIDGKT |
Precision/ Low Power/ 18MHz Transimpedance Amplifier |
Burr Brown |
7 |
OPA2381AIDRBR |
Precision/ Low Power/ 18MHz Transimpedance Amplifier |
Burr Brown |
8 |
OPA2381AIDRBT |
Precision/ Low Power/ 18MHz Transimpedance Amplifier |
Burr Brown |
9 |
OPA381AIDGKR |
Precision/ Low Power/ 18MHz Transimpedance Amplifier |
Burr Brown |
10 |
OPA381AIDGKT |
Precision/ Low Power/ 18MHz Transimpedance Amplifier |
Burr Brown |
11 |
OPA381AIDRBR |
Precision/ Low Power/ 18MHz Transimpedance Amplifier |
Burr Brown |
12 |
OPA381AIDRBT |
Precision/ Low Power/ 18MHz Transimpedance Amplifier |
Burr Brown |
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