No. |
Part Name |
Description |
Manufacturer |
1 |
BUZ350 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.12 Ohm, 22A, NL |
Infineon |
2 |
BUZ350 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
3 |
DTZ350 |
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
4 |
DTZ350A |
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
5 |
LMZ35003 |
2.5A SIMPLE SWITCHER® Power Module with 7V-50V Input in QFN package |
Texas Instruments |
6 |
LMZ35003RKGR |
SIMPLE SWITCHER? 7V to 50V, 2.5A Wide Vin Power Module in Small Package 41-B1QFN -40 to 85 |
Texas Instruments |
7 |
LMZ35003RKGT |
SIMPLE SWITCHER? 7V to 50V, 2.5A Wide Vin Power Module in Small Package 41-B1QFN -40 to 85 |
Texas Instruments |
8 |
PFZ350 |
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
9 |
PFZ350A |
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
10 |
PMZ350UPE |
20 V, P-channel Trench MOSFET |
Nexperia |
11 |
PMZ350UPE |
20 V, P-channel Trench MOSFET |
NXP Semiconductors |
12 |
PMZ350XN |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
| | | |