No. |
Part Name |
Description |
Manufacturer |
1 |
IRF3704ZCL |
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
2 |
IRF3704ZCLPBF |
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
3 |
IRF3707ZCL |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
4 |
IRF3707ZCLPBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
5 |
IRF3709ZCL |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
6 |
IRF3709ZCLPBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
7 |
IRF3711ZCL |
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
8 |
IRF3711ZCLPBF |
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
9 |
IRL3715ZCL |
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
10 |
IRL3715ZCLPBF |
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
11 |
K4T51043QC-ZCLCC |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
12 |
K4T51043QC-ZCLD5 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
13 |
K4T51043QC-ZCLD6 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
14 |
K4T51043QC-ZCLE6 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
15 |
K4T51083QC-ZCLCC |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
16 |
K4T51083QC-ZCLD5 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
17 |
K4T51083QC-ZCLD6 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
18 |
K4T51083QC-ZCLE6 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
19 |
K4T51163QC-ZCLCC |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
20 |
K4T51163QC-ZCLD5 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
21 |
K4T51163QC-ZCLD6 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
22 |
K4T51163QC-ZCLE6 |
512Mb C-die DDR2 SDRAM |
Samsung Electronic |
23 |
PB-IRF3704ZCL |
Leaded 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
24 |
PB-IRF3707ZCL |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
25 |
PB-IRF3709ZCL |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
26 |
PB-IRF3711ZCL |
Leaded 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
27 |
PB-IRL3715ZCL |
Leaded 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
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