| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1DI300ZP-120 |
Power Transistor Module |
Fuji Electric |
| 2 |
FAR-F6CE-1G9500-L2ZP-W |
Piezoelectric SAW BPF (1000 to 2500 MHz) |
Fujitsu Microelectronics |
| 3 |
HD64180ZP-10 |
10MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 4 |
HD64180ZP-6 |
6MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 5 |
HD64180ZP-8 |
8MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
| 6 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 7 |
HM514258AZP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 8 |
HM514258AZP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 9 |
HM514258AZP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 10 |
HM514258AZP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 11 |
HM514260LZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 12 |
HM514260LZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13 |
HM514260LZP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 14 |
HM514260ZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 15 |
HM514260ZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 16 |
HM514260ZP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 17 |
HM514800LZP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 18 |
HM514800LZP-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 19 |
HM514800LZP-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 20 |
HM514800ZP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 21 |
HM514800ZP-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 22 |
HM514800ZP-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 23 |
HM53461ZP-10 |
100ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 24 |
HM53461ZP-12 |
120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 25 |
HM53461ZP-15 |
150ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 26 |
KTR18-EZP-F-3 |
Endured high voltage fixed thick film chip resistors |
ROHM |
| 27 |
KTR18-EZP-F-4 |
Endured high voltage fixed thick film chip resistors |
ROHM |
| 28 |
KTR18-EZP-J-3 |
Endured high voltage fixed thick film chip resistors |
ROHM |
| 29 |
KTR18-EZP-J-4 |
Endured high voltage fixed thick film chip resistors |
ROHM |
| 30 |
MI-P2ZP-IXA |
Military Chassis Mount DC-DC Converters 10 to 300W Single / Dual / Triple Outputs |
Vicor Corporation |
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