No. |
Part Name |
Description |
Manufacturer |
1 |
1DI300ZP-120 |
Power Transistor Module |
Fuji Electric |
2 |
HD64180ZP-10 |
10MHz; V(cc) -0.3 to +7.0V; V(in): -0.3 to +0.3V; 8-bit CMOS micro processing unit |
Hitachi Semiconductor |
3 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
4 |
HM514258AZP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
5 |
HM514260LZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
6 |
HM514260ZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
7 |
HM514800LZP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
8 |
HM514800ZP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
9 |
HM53461ZP-10 |
100ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
10 |
HM53461ZP-12 |
120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
11 |
HM53461ZP-15 |
150ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
12 |
PEEL18LV8ZP-15 |
CMOS Programmable Electrically Erasable Logic Device |
Anachip |
13 |
PEEL18LV8ZP-15L |
CMOS Programmable Electrically Erasable Logic Device |
Anachip |
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