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Datasheets for ELECTRO

Datasheets found :: 200777
Page: | 331 | 332 | 333 | 334 | 335 | 336 | 337 | 338 | 339 |
No. Part Name Description Manufacturer
10021 8 SIP 8SIP Package Dimensions Samsung Electronic
10022 8 SIP 8SIP Package Dimensions Samsung Electronic
10023 8 SOP 8SOP Package Dimensions Samsung Electronic
10024 8-1462000-5 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
10025 80-2 VHF 175MHz 7.5V 0.75W NPN RF Transistor SGS Thomson Microelectronics
10026 80064 Hermetically sealed NPN power transistor featuring a unique matrix structure SGS Thomson Microelectronics
10027 8021 8K x 8 Bit RAM White Electronic Designs
10028 80264 NPN power RF transistor designed for Class C linear applications 1-4GHz SGS Thomson Microelectronics
10029 8050 NPN EPITAXIAL SILICON PLANAR TRANSISTOR Micro Electronics
10030 80610-18 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
10031 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
10032 8089 Digitally Programmed Amplifier White Electronic Designs
10033 80C35 CMOS 8-Bit Microcontroller OKI electronic componets
10034 81150M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
10035 81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
10036 81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
10037 81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
10038 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
10039 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
10040 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
10041 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
10042 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
10043 81550M High power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
10044 81600M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
10045 8169 DIGITAL AUDIO PROCESSOR WITH MULTICHANNEL DDX�� ST Microelectronics
10046 81720-20 Transistor for communications applications SGS Thomson Microelectronics
10047 81922-18 Transistor for communications applications SGS Thomson Microelectronics
10048 81C55 2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER OKI electronic components
10049 81C55 2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER OKI electronic eomponets
10050 82022-20 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics


Datasheets found :: 200777
Page: | 331 | 332 | 333 | 334 | 335 | 336 | 337 | 338 | 339 |



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