| No. |
Part Name |
Description |
Manufacturer |
| 10021 |
NJM2641 |
Two-phase Unipolar DC Brushless Motor Pre-Driver IC |
New Japan Radio |
| 10022 |
NJM2641E |
Two-phase Unipolar DC Brushless Motor Pre-Driver IC |
New Japan Radio |
| 10023 |
NJM2641M |
Two-phase Unipolar DC Brushless Motor Pre-Driver IC |
New Japan Radio |
| 10024 |
NJM2641RB1 |
Two-phase Unipolar DC Brushless Motor Pre-Driver IC |
New Japan Radio |
| 10025 |
NJT4030P |
Bipolar Power Transistors, PNP, 3.0 A, 40 V |
ON Semiconductor |
| 10026 |
NJT4031N |
NPN Bipolar Power Transistor 40 Volts 3 Amps SOT223 |
ON Semiconductor |
| 10027 |
NJW44H11 |
80 V NPN, 10 A Power Bipolar Transistor |
ON Semiconductor |
| 10028 |
NSS40301MZ4 |
NPN Bipolar Power Transistor 40V, 3A, Low VCE(sat) |
ON Semiconductor |
| 10029 |
NTE3051 |
0.27� Polarity and Overflow Numeric Display, Common Anode |
NTE Electronics |
| 10030 |
NTE3300 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10031 |
NTE3301 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10032 |
NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10033 |
NTE3303 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10034 |
NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10035 |
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10036 |
NTE3312 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10037 |
NTE3320 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10038 |
NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10039 |
NTE3322 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10040 |
NTE3323 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 10041 |
NTE7141 |
Integrated Circuit Dual BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output |
NTE Electronics |
| 10042 |
NTE7144 |
Integrated Circuit BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output |
NTE Electronics |
| 10043 |
OEI2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
| 10044 |
OEI2920 |
20 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
| 10045 |
OHN3075U |
HALLOGIC BIPOLAR HALL EFFECT SENSORS |
etc |
| 10046 |
OHN3175U |
Hallogic bipolar hall effect sensor |
Optek Technology |
| 10047 |
OHN3177U |
Hallogic bipolar hall effect sensor |
Optek Technology |
| 10048 |
OHS3075U |
HALLOGIC BIPOLAR HALL EFFECT SENSORS |
etc |
| 10049 |
OHS3150U |
Hallogic bipolar hall effect sensor |
Optek Technology |
| 10050 |
OHS3151U |
Hallogic bipolar hall effect sensor |
Optek Technology |
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