| No. |
Part Name |
Description |
Manufacturer |
| 10051 |
NE1617A |
Temperature monitor for microprocessor systems |
Philips |
| 10052 |
NE1617ADS |
Temperature monitor for microprocessor systems |
NXP Semiconductors |
| 10053 |
NE1617ADS |
NE1617A; Temperature monitor for microprocessor systems |
Philips |
| 10054 |
NE1617DS |
Temperature monitor for microprocessor systems |
Philips |
| 10055 |
NE1618 |
Temperature monitor for microprocessor systems |
Philips |
| 10056 |
NE1618DS |
Temperature monitor for microprocessor systems |
Philips |
| 10057 |
NE1619 |
HECETA 4 Temperature and voltage monitor |
Philips |
| 10058 |
NE1619DS |
HECETA4 Temperature and voltage monitor |
NXP Semiconductors |
| 10059 |
NE1619DS |
Temperature and voltage monitor |
Philips |
| 10060 |
NE57606 |
2 to 4 cell redundant Lithium-ion overcharge monitor |
Philips |
| 10061 |
NE57606CD |
2 to 4 cell redundant Lithium-ion overcharge monitor |
Philips |
| 10062 |
NE57606DD |
2 to 4 cell redundant Lithium-ion overcharge monitor |
Philips |
| 10063 |
NE57606ED |
2 to 4 cell redundant Lithium-ion overcharge monitor |
Philips |
| 10064 |
NE57606YD |
2 to 4 cell redundant Lithium-ion overcharge monitor |
Philips |
| 10065 |
NG80960KB-25 |
Embedded 32-bit microprocessor with integrated floating-point unit. |
Intel |
| 10066 |
NGB15N41CLT4 |
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max) |
ON Semiconductor |
| 10067 |
NGB18N40CLB |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
| 10068 |
NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
| 10069 |
NGB8202N |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK |
ON Semiconductor |
| 10070 |
NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK |
ON Semiconductor |
| 10071 |
NGB8204N |
Ignition IGBT, 18 A, 400 V, N-Channel D2PAK |
ON Semiconductor |
| 10072 |
NGB8206N |
Ignition IGBT, N-Channel, 20 A, 350 V, D2PAK |
ON Semiconductor |
| 10073 |
NGB8207AN |
Ignition IGBT, N-Channel, 20 A, 365 V, D2PAK |
ON Semiconductor |
| 10074 |
NGB8207N |
Ignition IGBT, N-Channel, 20 A, 365 V, D2PAK |
ON Semiconductor |
| 10075 |
NGB8245N |
Ignition IGBT, N-Channel, 20 A, 450 V, D2PAK |
ON Semiconductor |
| 10076 |
NGD15N41CL |
Ignition IGBT 15 Amps, 410 Volts |
ON Semiconductor |
| 10077 |
NGD15N41CL-D |
Ignition IGBT 15 Amps, 410 Volts N-Channel DPAK, D2PAK and TO-220 |
ON Semiconductor |
| 10078 |
NGD15N41CLT4 |
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max) |
ON Semiconductor |
| 10079 |
NGD18N40CLB |
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on) |
ON Semiconductor |
| 10080 |
NGD18N40CLBT4 |
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on) |
ON Semiconductor |
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