| No. |
Part Name |
Description |
Manufacturer |
| 10111 |
TC554161FTL-85L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
| 10112 |
TC554161FTL-85V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 10113 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 10114 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 10115 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 10116 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 10117 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 10118 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 10119 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 10120 |
TC5564AFL-15 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 10121 |
TC5564AFL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 10122 |
TC5564APL-15 |
-0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAM |
TOSHIBA |
| 10123 |
TC5564APL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 10124 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 10125 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 10126 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 10127 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 10128 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 10129 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 10130 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 10131 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 10132 |
TC558128AJ |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 10133 |
TC558128AJ-15 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 10134 |
TC558128AJ-20 |
131,072-word by 8 bit CMOS static RAM, access time 20ns |
TOSHIBA |
| 10135 |
TC558128BFT-12 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 10136 |
TC558128BFT-15 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 10137 |
TC558128BJ |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 10138 |
TC558128BJ-12 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 10139 |
TC558128BJ-15 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 10140 |
TC55NEM208A |
SRAM - Low Power |
TOSHIBA |
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