| No. |
Part Name |
Description |
Manufacturer |
| 10171 |
JM38510_33601BE |
4-Bit Bidirectional Universal Shift Register |
National Semiconductor |
| 10172 |
JM38510_33601BF |
4-Bit Bidirectional Universal Shift Register |
National Semiconductor |
| 10173 |
JM38510_33801BK |
4-Bit Arithmetic Logic Unit |
National Semiconductor |
| 10174 |
JM38510_33801BL |
4-Bit Arithmetic Logic Unit |
National Semiconductor |
| 10175 |
JM38510_76506B2 |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 10176 |
JM38510_76506BR |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 10177 |
JM38510_76506BS |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 10178 |
JM38510_76506S2 |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 10179 |
JM38510_76506SR |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 10180 |
JM38510_76506SS |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 10181 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10182 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10183 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10184 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10185 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10186 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10187 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10188 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10189 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10190 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
| 10191 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10192 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10193 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10194 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10195 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10196 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10197 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 10198 |
K2EB-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 10199 |
K2EBP-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 10200 |
K4EB-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
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