| No. |
Part Name |
Description |
Manufacturer |
| 10171 |
UPA2752 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10172 |
UPA2752GR-E1 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10173 |
UPA2752GR-E2 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10174 |
UPA2753 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10175 |
UPA2753GR-E1 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10176 |
UPA2753GR-E2 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10177 |
UPA2754 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10178 |
UPA2754GR-E1 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10179 |
UPA2754GR-E2 |
Nch enhancement-type MOSFET (Dual type) |
NEC |
| 10180 |
US224D20 |
Static (1k x 4) bit RAM (basic type), possibly equivalent HM6514 |
RFT |
| 10181 |
VL224D20 |
ditto (seizure type) |
RFT |
| 10182 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10183 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10184 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10185 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10186 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10187 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10188 |
WT6148 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10189 |
WT6148-K42 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10190 |
WT6148-L44 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10191 |
WT6148-N40 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10192 |
WT6148-N42 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10193 |
WT6148-S44 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10194 |
WT6160 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10195 |
WT6160-K42 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10196 |
WT6160-L44 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10197 |
WT6160-N40 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10198 |
WT6160-N42 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| 10199 |
WT6160-S44 |
Digital Monitor Controller (ROM Type) |
Weltrend Semiconductor |
| | | |
