| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
BD90GC0MEFJ-ME2 |
Automotive 1.0A Variable Output LDO Regulator |
ROHM |
| 1022 |
BD9B100MUV |
2.7V to 5.5V Input, 1.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1023 |
BD9B100MUV-E2 |
2.7V to 5.5V Input, 1.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1024 |
BD9E100FJ-LB(E2) |
7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1025 |
BD9E100FJ-LB(H2) |
7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1026 |
BD9E100FJ-LBGE2 |
7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1027 |
BD9E100FJ-LBGH2 |
7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1028 |
BD9E101FJ-LB(E2) |
7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1029 |
BD9E101FJ-LB(H2) |
7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1030 |
BD9E101FJ-LBGE2 |
7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1031 |
BD9E101FJ-LBGH2 |
7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1032 |
BD9E102FJ |
7.0V to 26V Input, 1.0A, Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1033 |
BD9E102FJ-GE2 |
7.0V to 26V Input, 1.0A, Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 1034 |
BDJ0GC0MEFJ-M |
Automotive 1.0A Variable Output LDO Regulator |
ROHM |
| 1035 |
BDJ0GC0MEFJ-ME2 |
Automotive 1.0A Variable Output LDO Regulator |
ROHM |
| 1036 |
BDJ2GC0MEFJ-M |
Automotive 1.0A Variable Output LDO Regulator |
ROHM |
| 1037 |
BDJ2GC0MEFJ-ME2 |
Automotive 1.0A Variable Output LDO Regulator |
ROHM |
| 1038 |
BF257 |
1.000W General Purpose NPN Metal Can Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1039 |
BF258 |
1.000W General Purpose NPN Metal Can Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1040 |
BF259 |
1.000W General Purpose NPN Metal Can Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1041 |
BF391 |
1.000W General Purpose NPN Plastic Leaded Transistor. 200V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 1042 |
BF391 |
1.000W General Purpose NPN Plastic Leaded Transistor. 200V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 1043 |
BF392 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 1044 |
BF392 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 1045 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1046 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1047 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1048 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1049 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1050 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
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