| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
MIG600J2CMB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1022 |
MIG75J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1023 |
MIG75J201H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1024 |
MIG75J6CSB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1025 |
MIG75J7CSB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1026 |
MIG75Q201H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1027 |
MIG75Q202H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1028 |
MIG75Q6CSB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1029 |
MIG75Q7CSB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1030 |
MP4202 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE |
TOSHIBA |
| 1031 |
MP4209 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1032 |
MP4210 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1033 |
MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1034 |
MP4403 |
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE |
TOSHIBA |
| 1035 |
MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 1036 |
MP4411 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1037 |
MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1038 |
MP4703 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE |
TOSHIBA |
| 1039 |
MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
TOSHIBA |
| 1040 |
MP6750 |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1041 |
MP6752 |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1042 |
MP6754 |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1043 |
MP6757 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1044 |
MP6759 |
GTR Module Silicon N Channel IGBT Motor Control Applications High Power Switching Applications |
TOSHIBA |
| 1045 |
NDH833N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V |
Fairchild Semiconductor |
| 1046 |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 1047 |
NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 1048 |
NIF5002N |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
| 1049 |
NIF5002NT1 |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
| 1050 |
NIF5002NT1G |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223 |
ON Semiconductor |
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