| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
SMCJ5379 |
Pd=5.0W, Vz=110V zener diode |
MCC |
| 1022 |
SMCJ5380 |
Pd=5.0W, Vz=120V zener diode |
MCC |
| 1023 |
SMCJ5381 |
Pd=5.0W, Vz=130V zener diode |
MCC |
| 1024 |
SMCJ5382 |
Pd=5.0W, Vz=140V zener diode |
MCC |
| 1025 |
SMCJ5383 |
Pd=5.0W, Vz=150V zener diode |
MCC |
| 1026 |
SMCJ5384 |
Pd=5.0W, Vz=160V zener diode |
MCC |
| 1027 |
SMCJ5385 |
Pd=5.0W, Vz=170V zener diode |
MCC |
| 1028 |
SMCJ5386 |
Pd=5.0W, Vz=180V zener diode |
MCC |
| 1029 |
SMCJ5387 |
Pd=5.0W, Vz=190V zener diode |
MCC |
| 1030 |
SMCJ5388 |
Pd=5.0W, Vz=200V zener diode |
MCC |
| 1031 |
T14L256A-8J |
8ns; -0.5 to 4.6V; 1.0W; 32 x 8 high speed CMOS static RAM |
TM Technology |
| 1032 |
T14L256A-8P |
8ns; -0.5 to 4.6V; 1.0W; 32 x 8 high speed CMOS static RAM |
TM Technology |
| 1033 |
T14M1024-10H |
10ns; -0.5 to 7.0V; 1.0W; 50mA; 128 x 8 high speed CMOS static RAM |
TM Technology |
| 1034 |
T14M1024-10J |
10ns; -0.5 to 7.0V; 1.0W; 50mA; 128 x 8 high speed CMOS static RAM |
TM Technology |
| 1035 |
T14M1024-10P |
10ns; -0.5 to 7.0V; 1.0W; 50mA; 128 x 8 high speed CMOS static RAM |
TM Technology |
| 1036 |
T14M256A-8J |
8ns; -0.5 to 7.0V; 1.0W; 50mA; 32 x 8 high speed CMOS static RAM |
TM Technology |
| 1037 |
T14M256A-8P |
8ns; -0.5 to 7.0V; 1.0W; 50mA; 32 x 8 high speed CMOS static RAM |
TM Technology |
| 1038 |
T221160A-30J |
30ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 1039 |
T221160A-30S |
30ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 1040 |
T221160A-35J |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 1041 |
T221160A-35S |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 1042 |
T224162B |
4.5 to 5.5V; 1.0W; 256K x 16 dynamic RAM: EDO page mode |
TM Technology |
| 1043 |
T2316405A |
0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode |
TM Technology |
| 1044 |
T2316407A |
0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode |
TM Technology |
| 1045 |
T35L3232B-3.8Q |
0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode |
TM Technology |
| 1046 |
T35L3232B-4T |
0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode |
TM Technology |
| 1047 |
T4312816A-10S |
100MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 1048 |
T4312816A-6S |
166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 1049 |
T4312816A-7.5S |
133MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 1050 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
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