| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
MRF5S21130HSR3 |
2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1022 |
MRF5S21130R3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1023 |
MRF5S21130SR3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1024 |
MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 1025 |
MRF5S21150R3 |
2170 MHz, 33 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1026 |
MRF5S21150SR3 |
2170 MHz, 33 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1027 |
MRF6S21100HR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1028 |
MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1029 |
MRF9180 |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 1030 |
MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1031 |
MRF9180S |
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
Motorola |
| 1032 |
NCP1546 |
1.5 A, 170 kHz, Low Voltage Buck Regulator with Synchronization Capability |
ON Semiconductor |
| 1033 |
NCV8842 |
Buck Regulator, 1.5 A, 170 kHz, with Synchronization Capability |
ON Semiconductor |
| 1034 |
NE38018-T1-68 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 70-170 mA. |
NEC |
| 1035 |
NMC27C010Q17 |
170 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1036 |
NMC27C010Q170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1037 |
NMC27C010QE170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1038 |
NMC27C010QM170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1039 |
NMC27C1024Q17 |
170 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1040 |
NMC27C1024Q170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1041 |
NMC27C1024QE170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1042 |
NMC27C1024QM170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1043 |
NMC27C256Q17 |
170 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1044 |
NMC27C512AN17 |
170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
| 1045 |
NMC27C512AN170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
| 1046 |
NMC27C512ANE17 |
170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
| 1047 |
NMC27C512ANE170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
| 1048 |
NMC27C512AQ17 |
170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1049 |
NMC27C512AQ170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1050 |
NMC27C512AQE170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
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