No. |
Part Name |
Description |
Manufacturer |
1021 |
MAX6728KARYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1022 |
MAX6729KAMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1023 |
MAX6729KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1024 |
MAX6729KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1025 |
MAX6729KARVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1026 |
MAX6729KARYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1027 |
MAX6730UTRD3-T |
Vcc1: 2.625 V,active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
1028 |
MAX6731UTRD3-T |
Vcc1: 2.625 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
1029 |
MAX6732UTRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
1030 |
MAX6733UTRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
1031 |
MAX6734KARVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
1032 |
MAX6735KARVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output |
MAXIM - Dallas Semiconductor |
1033 |
MAX6736XKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1034 |
MAX6736XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1035 |
MAX6736XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1036 |
MAX6736XKRHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1037 |
MAX6736XKRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1038 |
MAX6736XKRYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1039 |
MAX6736XKVRD3-T |
Vcc1: 1.575 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1040 |
MAX6737XKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1041 |
MAX6737XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1042 |
MAX6737XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1043 |
MAX6737XKRHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1044 |
MAX6737XKRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1045 |
MAX6737XKRYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1046 |
MAX6737XKVRD3-T |
Vcc1: 1.575 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1047 |
MAX6738XKRD3-T |
Vcc1: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1048 |
MAX6739XKRD3-T |
Vcc1: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1049 |
MAX6740XKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
1050 |
MAX6740XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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