| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
Q62702-F869 |
PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS) |
Siemens |
| 1022 |
Q62702-F884 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 1023 |
Q62702-F885 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 1024 |
Q62702-F935 |
NPN SILICON RF TRANSISTOR (For linear broadband amplifier applications up to 500 MHz SAW filter driver in TV tuners) |
Siemens |
| 1025 |
Q62702-F936 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
| 1026 |
Q62702-F938 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
| 1027 |
Q62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 1028 |
Q62702-F944 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 1029 |
Q62702-F976 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 1030 |
Q62702-F977 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 1031 |
Q62702-F979 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
| 1032 |
Q62702-F982 |
PNP Silicon RF Transistor (For VHF oscillator applications) |
Siemens |
| 1033 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1034 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1035 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1036 |
Q62702-G0057 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 1037 |
Q62702-G0058 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 �� block LNA / MIX Unconditionally stable) |
Siemens |
| 1038 |
Q62702-G0067 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 1039 |
Q62702-G0071 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 1040 |
Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 1041 |
Q62702-G44 |
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
Siemens |
| 1042 |
Q62702-K0047 |
NEU: 2fach-Silizium-PIN-Fotodiode in SMT NEW: 2-Chip Silicon PIN Photodiode in SMT |
Siemens |
| 1043 |
Q62702-K34 |
6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array |
Siemens |
| 1044 |
Q62702-K35 |
6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array |
Siemens |
| 1045 |
Q62702-K8 |
3fach-Silizium-Fotodiodenzeile 3-Chip Silicon Photodiode Array |
Siemens |
| 1046 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1047 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1048 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 1049 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1050 |
Q62702-M0002 |
PNP Silicon Transistors |
Siemens |
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