| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2N5163 |
N-Channel Field Effect Transistor General Purpose Amplifier |
Amelco Semiconductor |
| 1022 |
2N5172 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1023 |
2N5172_D26Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1024 |
2N5172_D27Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1025 |
2N5172_D74Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1026 |
2N5172_D75Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1027 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 1028 |
2N5179 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 1029 |
2N5179 |
VHF/UHF AMPLIFIER |
ST Microelectronics |
| 1030 |
2N5196 |
Dual N-channel JFET general purpose amplifier. |
Intersil |
| 1031 |
2N5197 |
Dual N-channel JFET general purpose amplifier. |
Intersil |
| 1032 |
2N5198 |
Dual N-channel JFET general purpose amplifier. |
Intersil |
| 1033 |
2N5199 |
Dual N-channel JFET general purpose amplifier. |
Intersil |
| 1034 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 1035 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 1036 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 1037 |
2N5209 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 1038 |
2N5209-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 1039 |
2N5209RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 1040 |
2N5210 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1041 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 1042 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 1043 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1044 |
2N5210BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1045 |
2N5210NMBU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1046 |
2N5210RLRA |
Amplifier Transistor NPN |
ON Semiconductor |
| 1047 |
2N5210TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1048 |
2N5210TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1049 |
2N5210TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 1050 |
2N5210TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
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