| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1022 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1023 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1024 |
BGU6005 |
Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1025 |
BGU7005 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1026 |
BGU7007 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1027 |
BGU8004 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1028 |
BGU8006 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1029 |
BGU8007 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1030 |
BGU8009 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1031 |
BGU8010 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1032 |
BGU8011 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 1033 |
BIC1422 |
MAIN SWITCH MOSFET AND COMMUTATION MOSFET |
etc |
| 1034 |
BQ24080 |
1-cell Li-Ion Charger w/ 1-A FET, AC Present and Charge Enable |
Texas Instruments |
| 1035 |
BQ24080DRCR |
1-cell Li-Ion Charger w/ 1-A FET, AC Present and Charge Enable 10-VSON -40 to 85 |
Texas Instruments |
| 1036 |
BQ24080DRCRG4 |
1-cell Li-Ion Charger w/ 1-A FET, AC Present and Charge Enable 10-VSON -40 to 85 |
Texas Instruments |
| 1037 |
BQ24080DRCT |
1-cell Li-Ion Charger w/ 1-A FET, AC Present and Charge Enable 10-VSON -40 to 85 |
Texas Instruments |
| 1038 |
BQ24080DRCTG4 |
1-cell Li-Ion Charger w/ 1-A FET, AC Present and Charge Enable 10-VSON -40 to 85 |
Texas Instruments |
| 1039 |
BQ48SH-28X6 |
SNAPHAT WITH INTEGRATED BATTERY AND CRYSTAL |
Texas Instruments |
| 1040 |
BQ48SH-28X6NSH |
SNAPHAT WITH INTEGRATED BATTERY AND CRYSTAL |
Texas Instruments |
| 1041 |
BU104 |
NPN silicon power transistor, deflection and commutation |
SESCOSEM |
| 1042 |
BU109 |
NPN silicon power transistor, deflection and commutation |
SESCOSEM |
| 1043 |
BU126 |
NPN silicon power transistor, deflection and commutation |
SESCOSEM |
| 1044 |
BU129 |
NPN silicon power transistor, deflection and commutation |
SESCOSEM |
| 1045 |
BU134 |
NPN silicon power transistor, deflection and commutation |
SESCOSEM |
| 1046 |
BU406D |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
| 1047 |
BYP30-600 |
Fast recovery diode. Inverse diode for power transistors, invertor, UPS, snubber and clamping diode. Ifav = 30A, Vrrm = 600V. |
USHA India LTD |
| 1048 |
C20 |
Memory Micromodules General Information for D1, D2 and C Packaging |
SGS Thomson Microelectronics |
| 1049 |
C20 |
MEMORY MICROMODULES GENERAL INFORMATION FOR D1, D2 AND C PACKAGING |
ST Microelectronics |
| 1050 |
C20-MICROMODULES |
MEMORY MICROMODULES GENERAL INFORMATION FOR D1, D2 AND C PACKAGING |
SGS Thomson Microelectronics |
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