| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
BAS35 |
General purpose controlled avalanche (double) diodes |
Nexperia |
| 1022 |
BAS35 |
General purpose controlled avalanche (double) diodes |
NXP Semiconductors |
| 1023 |
BAS35 |
General purpose controlled avalanche (double) diodes |
Philips |
| 1024 |
BAT31 |
Silicon Avalanche noise diode |
Philips |
| 1025 |
BAW21 |
Avalanche diode for telephony |
IPRS Baneasa |
| 1026 |
BAW21 |
Controlled avalanche silicon epitaxy planar diode |
ITT Industries |
| 1027 |
BAX12 |
Avalanche diode for telephony |
IPRS Baneasa |
| 1028 |
BAX12 |
Silicon whiskerless diode, controlled avalanche diode, avalanche voltage 120-175V at 1mA |
Mullard |
| 1029 |
BAX12 |
Silicon whiskerless diode, controlled avalanche diode, avalanche voltage 120-175V at 1mA |
Mullard |
| 1030 |
BAX12 |
Silicon Oxide Passivated Avalanche Diode |
Philips |
| 1031 |
BAX12 |
Controlled avalanche diode |
Philips |
| 1032 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1033 |
BGY12A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1034 |
BGY12B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1035 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1036 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1037 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1038 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1039 |
BGY13 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1040 |
BGY13A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1041 |
BGY13B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1042 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1043 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1044 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1045 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1046 |
BGY14 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1047 |
BGY14A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1048 |
BGY14B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1049 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1050 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
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