| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
1H8 |
TECHINCAL SPECIFICATIONS OF MINIATURE HIGH EFFICIENCY RECTIFIER |
DC Components |
| 1022 |
1J4B42 |
RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS) |
TOSHIBA |
| 1023 |
1JH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 1024 |
1JH46 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 1025 |
1JU41 |
HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY) |
TOSHIBA |
| 1026 |
1JU42 |
HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY) |
TOSHIBA |
| 1027 |
1MBI150SH-140 |
Tentative target specification |
Fuji Electric |
| 1028 |
1MBI200F-120 |
IGBT module for motor drive inverter, AC and DC servo drive amplifier applications |
COLLMER SEMICONDUCTOR INC |
| 1029 |
1MBI200L-120 |
IGBT module for motor drive inverter, AC and DC servo drive amplifier applications |
COLLMER SEMICONDUCTOR INC |
| 1030 |
1N3070 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 1031 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 1032 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 1033 |
1N4001 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 1034 |
1N4001 |
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
DC Components |
| 1035 |
1N4001 |
V(rrm): 50V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 1036 |
1N4001A |
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
DC Components |
| 1037 |
1N4001G |
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER |
DC Components |
| 1038 |
1N4002 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 1039 |
1N4002 |
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
DC Components |
| 1040 |
1N4002 |
V(rrm): 100V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 1041 |
1N4002A |
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
DC Components |
| 1042 |
1N4002G |
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER |
DC Components |
| 1043 |
1N4003 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 1044 |
1N4003 |
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
DC Components |
| 1045 |
1N4003 |
V(rrm): 200V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 1046 |
1N4003A |
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
DC Components |
| 1047 |
1N4003G |
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER |
DC Components |
| 1048 |
1N4004 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 1049 |
1N4004 |
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER |
DC Components |
| 1050 |
1N4004 |
V(rrm): 400V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
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