| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2SA311 |
High-Speed Switching Transistor |
TOSHIBA |
| 1022 |
2SA312 |
High-Speed Switching Transistor |
TOSHIBA |
| 1023 |
2SA372 |
High-Speed Switching Transistor |
TOSHIBA |
| 1024 |
2SA446 |
High-Speed Switching Transistor |
TOSHIBA |
| 1025 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1026 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1027 |
2SA50 |
High-Speed Switching Transistor |
TOSHIBA |
| 1028 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1029 |
2SA532 |
Medium Power Amplifiers and Switches |
Micro Electronics |
| 1030 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 1031 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 1032 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 1033 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 1034 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 1035 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 1036 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 1037 |
2SA78 |
High-Speed Switching Transistor |
TOSHIBA |
| 1038 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 1039 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 1040 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 1041 |
2SB1142 |
PNP Epitaxial Planar Silicon Transistors 50V/2.5A High-Speed Switching Applications |
SANYO |
| 1042 |
2SB1285 |
Low-speed switching Darlington transistor |
Shindengen |
| 1043 |
2SB1448 |
Low-speed switching Darlington transistor |
Shindengen |
| 1044 |
2SB1468 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 1045 |
2SB150 |
Low-Speed Switching Transistor |
TOSHIBA |
| 1046 |
2SB1578 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| 1047 |
2SB201 |
Low-Speed Switching Transistor |
TOSHIBA |
| 1048 |
2SB265 |
Low-Speed Switching Transistor |
TOSHIBA |
| 1049 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 1050 |
2SB40 |
Low-Speed Switching Transistor |
TOSHIBA |
| | | |
