| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
AM29DL320GT70WMIN |
For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. |
Advanced Micro Devices |
| 1022 |
AM29DL320GT90 |
For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. |
Advanced Micro Devices |
| 1023 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1024 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1025 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1026 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1027 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1028 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1029 |
AM82023-010 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 1030 |
AM82023-016 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 1031 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1032 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1033 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1034 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1035 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 1036 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 1037 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1038 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1039 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1040 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1041 |
AM82931-055 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1042 |
AM82931-055N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1043 |
AM82931-055S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1044 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1045 |
AMD-761 |
AMD-761 System Controller Software/BIOS Design Guide |
Advanced Micro Devices |
| 1046 |
AMD-762 |
AMD-762 System Controller Software/BIOS Design Guide |
Advanced Micro Devices |
| 1047 |
AMR960-35HE |
Linear Power Amplifier 35W, 925-960MHz, 26Vcc, designed for Cellular Radio GSM, NMT, E-TACS, AMPS applications |
Motorola |
| 1048 |
AN-215 |
RF small signal design using admittance parameters - Application Note |
Motorola |
| 1049 |
AN-215A |
Application Note - RF small signal design using two-port parameters |
Motorola |
| 1050 |
AN-267 |
Application Note - Matching Network designs with computer solutions |
Motorola |
| | | |
