| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
3MC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 1022 |
3MD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 1023 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 1024 |
3N246 |
Diode Rectifier Bridge Single 50V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 1025 |
3N247 |
Diode Rectifier Bridge Single 100V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 1026 |
3N248 |
Diode Rectifier Bridge Single 200V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 1027 |
3N249 |
Diode Rectifier Bridge Single 400V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 1028 |
3N250 |
Diode Rectifier Bridge Single 600V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 1029 |
3N251 |
Diode Rectifier Bridge Single 800V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 1030 |
3N252 |
Diode Rectifier Bridge Single 1KV 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 1031 |
3N253 |
Diode Rectifier Bridge Single 50V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 1032 |
3N254 |
Diode Rectifier Bridge Single 100V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 1033 |
3N255 |
Diode Rectifier Bridge Single 200V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 1034 |
3N256 |
Diode Rectifier Bridge Single 400V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 1035 |
3N257 |
Diode Rectifier Bridge Single 600V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 1036 |
3N258 |
Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 1037 |
3N259 |
Diode Rectifier Bridge Single 1KV 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 1038 |
3NC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 1039 |
3ND12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 1040 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
| 1041 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 1042 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 1043 |
40525 |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 1044 |
40526 |
2.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 1045 |
40527 |
2.5A 400V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 1046 |
40528 |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 1047 |
40529 |
2.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 1048 |
40530 |
2.5A 400V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 1049 |
40531 |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 1050 |
40532 |
2.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
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