| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2N4925 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1022 |
2N4931 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1023 |
2N5012 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1024 |
2N5015 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1025 |
2N5052 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 1026 |
2N5095 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1027 |
2N5148 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1028 |
2N5252 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1029 |
2N5253 |
BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE |
SemeLAB |
| 1030 |
2N5265 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 1031 |
2N5266 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 1032 |
2N5267 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 1033 |
2N5268 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 1034 |
2N5269 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 1035 |
2N5270 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 1036 |
2N5335 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1037 |
2N5338 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1038 |
2N5414 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 1039 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1040 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1041 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 1042 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 1043 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 1044 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 1045 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 1046 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 1047 |
2N5457 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 1048 |
2N5457-D |
JFETs - General Purpose N-Channel - Depletion |
ON Semiconductor |
| 1049 |
2N5458 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 1050 |
2N5459 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
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