No. |
Part Name |
Description |
Manufacturer |
1021 |
MX7672UQ05 |
High-Speed 12-Bit A/D Converters With External Reference Input |
MAXIM - Dallas Semiconductor |
1022 |
MX7672UQ10 |
High-Speed 12-Bit A/D Converters With External Reference Input |
MAXIM - Dallas Semiconductor |
1023 |
NCP1218 |
PWM Controller with Adjustable Skip Level and External Latch Input |
ON Semiconductor |
1024 |
NCP1219 |
PWM Controller with Adjustable Skip Level and External Latch Input |
ON Semiconductor |
1025 |
NCP1271 |
PWM Controller, Soft-Skip™ Standby, with Adjustable Skip Level and External Latch |
ON Semiconductor |
1026 |
NCP1530 |
600 mA PWM/PFM Step-Down Converter with External Synchronization Pin |
ON Semiconductor |
1027 |
NCP1530-D |
600 mA PWM/PFM Step-Down Converter with External Synchronization Pin |
ON Semiconductor |
1028 |
NCP1530DM25R2 |
600 mA PWM/PFM Step-Down Converter with External Synchronization Pin |
ON Semiconductor |
1029 |
NCP1530DM27R2 |
600 mA PWM/PFM Step-Down Converter with External Synchronization Pin |
ON Semiconductor |
1030 |
NCP1530DM30R2 |
600 mA PWM/PFM Step-Down Converter with External Synchronization Pin |
ON Semiconductor |
1031 |
NCP1530DM30R2G |
600 mA PWM/PFM Step-Down Converter with External Synchronization Pin |
ON Semiconductor |
1032 |
NCP1530DM33R2 |
600 mA PWM/PFM Step-Down Converter with External Synchronization Pin |
ON Semiconductor |
1033 |
NE57810 |
Advanced DDR memory termination power with external reference in |
Philips |
1034 |
NE57810S |
Advanced DDR memory termination power with external reference in |
Philips |
1035 |
NE57810TK |
Advanced DDR memory termination power with external reference voltage in |
NXP Semiconductors |
1036 |
NJU6359 |
Serial I/O Real Time Clock with Wake-up Output for External Clock |
New Japan Radio |
1037 |
NJU6359C |
SERIAL I/O REAL TIME CLOCK WITH WAKE-UP OUTPUT for EXTERNAL CLOCK |
New Japan Radio |
1038 |
NJU6359V |
SERIAL I/O REAL TIME CLOCK WITH WAKE-UP OUTPUT for EXTERNAL CLOCK |
New Japan Radio |
1039 |
P7152-10 |
Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
1040 |
P7752-10 |
Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
1041 |
PIC18C601E/L |
High-Performance ROM-less Microcontrollers with External Memory Bus |
Microchip |
1042 |
PIC18C601E/PT |
High-Performance ROM-less Microcontrollers with External Memory Bus |
Microchip |
1043 |
PIC18C601I/L |
High-Performance ROM-less Microcontrollers with External Memory Bus |
Microchip |
1044 |
PIC18C601I/PT |
High-Performance ROM-less Microcontrollers with External Memory Bus |
Microchip |
1045 |
PIC18C801E/L |
High-Performance ROM-less Microcontrollers with External Memory Bus |
Microchip |
1046 |
PIC18C801E/PT |
High-Performance ROM-less Microcontrollers with External Memory Bus |
Microchip |
1047 |
PIC18C801I/L |
High-Performance ROM-less Microcontrollers with External Memory Bus |
Microchip |
1048 |
PIC18C801I/PT |
High-Performance ROM-less Microcontrollers with External Memory Bus |
Microchip |
1049 |
PIC18F8625 |
Microchip's PIC18 architecture with 96 Kbytes of Enhanced FLASH program memory, 4 Kbytes of RAM, 1 Kbyte of data EEPROM and the largest selection of analog and digital peripherals, including External Memory Bus (up to 2 Mbytes).Ideal for l |
Microchip |
1050 |
PIC18F8721 |
Microchip's PIC18 architecture with 128 Kbytes of Enhanced FLASH program memory, 4 Kbytes of RAM, 1 Kbyte of data EEPROM and the largest selection of analog and digital peripherals, including External Memory Bus (up to 2 Mbytes). Ideal for |
Microchip |
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