| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2SD2703 |
General purpose amplification (30V, 1A) |
ROHM |
| 1022 |
2SD592 |
Silicon NPN epitaxial planer type(For low-frequency output amplification) |
Panasonic |
| 1023 |
2SD592 |
Silicon PNP epitaxial planer type(For low-frequency output amplification) |
Panasonic |
| 1024 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
| 1025 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
| 1026 |
2SD661 |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 1027 |
2SD661 |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 1028 |
2SD661A |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 1029 |
2SD661A |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
| 1030 |
2SD814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
| 1031 |
2SD814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
Panasonic |
| 1032 |
2SD968 |
Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 1033 |
2SD968 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 1034 |
2SD973 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) |
Panasonic |
| 1035 |
2SK1503-01 |
Fuji power MOSFET Specification |
Fuji Electric |
| 1036 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 1037 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 1038 |
2SK3530 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 1039 |
2SK3530-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 1040 |
2SK3679 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 1041 |
2SK3683 |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 1042 |
2SK3683-01MR |
Fuji Power MOSFET SuperFAP-G series Target Specification |
Fuji Electric |
| 1043 |
34P4 |
Silicon diodes, signal and fast rectification |
SESCOSEM |
| 1044 |
3510VM/MIL |
Detailed specification microcircuits, linear operational amplifier monolithic, silicon |
Burr Brown |
| 1045 |
3SK135A-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 1046 |
3SK135A-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 1047 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| 1048 |
3SK176A-T1 |
CATV TV tuner high-frequency amplification |
NEC |
| 1049 |
3SK176A-T2 |
CATV TV tuner high-frequency amplification |
NEC |
| 1050 |
3SK177-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| | | |
