| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 1022 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 1023 |
2SB1244 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 1024 |
2SB1245 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 1025 |
2SB306 |
High Voltage Switching Transistor |
TOSHIBA |
| 1026 |
2SB646 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 1027 |
2SB646A |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 1028 |
2SB717 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 1029 |
2SB718 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 1030 |
2SB814 |
Si PNP epitaxial planar high voltage, low-noise amplifier |
Panasonic |
| 1031 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1032 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
| 1033 |
2SC108 |
High Voltage Switching Transistor |
TOSHIBA |
| 1034 |
2SC1433 |
Silicon NPN triple diffused MESA transistor, high voltage switching applications |
TOSHIBA |
| 1035 |
2SC1434 |
Silicon NPN triple diffused MESA transistor, high voltage switching applicatio |
TOSHIBA |
| 1036 |
2SC1435 |
Silicon NPN triple diffused MESA transistor, high voltage switching applicatio |
TOSHIBA |
| 1037 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 1038 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 1039 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 1040 |
2SC1576 |
Silicon NPN triple diffused high voltage transistor Vcbo=450V |
TOSHIBA |
| 1041 |
2SC1615 |
High Voltage Amp. Triple Diffused Planar NPN Silicon Transistors |
ROHM |
| 1042 |
2SC1653 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1043 |
2SC1654 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1044 |
2SC1706 |
SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING |
Hitachi Semiconductor |
| 1045 |
2SC1706H |
SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING |
Hitachi Semiconductor |
| 1046 |
2SC1942 |
HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
| 1047 |
2SC2229 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAGE Switching, Driver Stage Audio Amplifier Applications |
TOSHIBA |
| 1048 |
2SC2230 |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 1049 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 1050 |
2SC2258A |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
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