| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1022 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1023 |
AN1541 |
A MEDIUM POWER AMPLIFIER AT 1.8GHZ USING THE NPN SI START499 TRANSISTOR |
SGS Thomson Microelectronics |
| 1024 |
ASMC-PAB9-TV005 |
ASMC-PAB9-TV005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
| 1025 |
ASMC-PHB9-TW005 |
ASMC-PHB9-TW005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
| 1026 |
ASMC-PRB9-TV005 |
ASMC-PRB9-TV005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
| 1027 |
ASZ15 |
Germanium power transistor, 10A |
COSEM |
| 1028 |
ASZ15 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 1029 |
ASZ16 |
Germanium power transistor, 10A |
COSEM |
| 1030 |
ASZ16 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 1031 |
ASZ17 |
Germanium power transistor, 10A |
COSEM |
| 1032 |
ASZ17 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 1033 |
ASZ18 |
Germanium power transistor, 10A |
COSEM |
| 1034 |
ASZ18 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 1035 |
AT-31625 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 1036 |
AT-31625-BLK |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 1037 |
AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 1038 |
AT-42000 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 1039 |
AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 1040 |
AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1041 |
AT-42035 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1042 |
AT-42070 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1043 |
AT-42085 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 1044 |
AT-42086 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1045 |
AT-42086-BLK |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1046 |
AT-42086-TR1 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1047 |
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 1048 |
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 1049 |
ATF-45171 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 1050 |
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
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