No. |
Part Name |
Description |
Manufacturer |
1021 |
MJE4352 |
Silicon PNP Power Transistors TO-3PN package |
Savantic |
1022 |
MJE4353 |
Silicon PNP Power Transistors TO-3PN package |
Savantic |
1023 |
MJH10012 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
1024 |
MKT-H04D |
4 LEAD.100 DIA P.C.SHIELDED METAL CAN PACKAGE (H) |
National Semiconductor |
1025 |
MOUNTING |
Mounting instructions for plastic plug-in package, flat-pack, package 5H8 DIN 41873, MOS ICs |
Siemens |
1026 |
NA8 |
8-Pin Package |
Analog Devices |
1027 |
NCP1508 |
Up to 500mA, 1MHz, High Efficiency Synchronous Step-Down DC-DC Converter in DFN Package |
ON Semiconductor |
1028 |
NCP1509 |
Up to 500mA, 1MHz, High Efficiency, Synchronous, Step-Down DC-DC Converter in DFN Package |
ON Semiconductor |
1029 |
NTLJD3115P |
Power MOSFET -20 V, -4.1 A, µCool¿ Dual P-Channel, 2x2 mm WDFN Package |
ON Semiconductor |
1030 |
NTLJD3181PZ |
Power MOSFET, −20 V, −4.0 A, uCool™, Dual P−Channel, ESD, 2x2 mm WDFN Package |
ON Semiconductor |
1031 |
NTLJD3183CZ |
Power MOSFET, 20 V/−20 V, 4.7 A/−4.0 A, uCool¿, Complementary, 2x2 mm, WDFN Package |
ON Semiconductor |
1032 |
NTLJS3A18PZ |
Power MOSFET, -20 V, -8.2 A, uCool, Single P-Channel, 2.0x2.0x0.8 mm WDFN Package |
ON Semiconductor |
1033 |
NTLUD3A50PZ |
Power MOSFET, Dual P-Channel, -20 V, -5.6 A, 2.0x2.0x0.55 mm UDFN Package |
ON Semiconductor |
1034 |
NTLUS3A18PZ |
Power MOSFET, -20 V, -8.2 A, Single Pch, ESD, 2.0x2.0x0.55 mm, uCool, UDFN Package |
ON Semiconductor |
1035 |
NTLUS4195PZ |
Power MOSFET, -30 V, -4 A, µCool™ Single P-Channel, ESD, 1.6 x 1.6 x 0.55 mm UDFN Package |
ON Semiconductor |
1036 |
NUF6005MU |
6 Line EMI Filter with ESD Protection in UDFN Package |
ON Semiconductor |
1037 |
NUF8000MU |
Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package |
ON Semiconductor |
1038 |
NUS3116MT |
Main Switch Power MOSFET -12 V, -6.2 A, µCool™ Single P-Channel with Dual PNP Low Vce(sat) Transistors, 3x3 mm WDFN Package |
ON Semiconductor |
1039 |
NX5304 |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE |
NEC |
1040 |
NX5304EH |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE |
NEC |
1041 |
NX5304EK |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE |
NEC |
1042 |
NX5306 |
NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
NEC |
1043 |
NX5306EHNX5306EK |
NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
NEC |
1044 |
NX5306EK |
NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
NEC |
1045 |
PB-IRF6644 |
Leaded A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 60 amperes. |
International Rectifier |
1046 |
PB-IRF6646 |
Leaded A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes. |
International Rectifier |
1047 |
PB-IRF6648 |
Leaded A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 86 amperes. |
International Rectifier |
1048 |
PIC12C508A |
This powerful (1µsecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit microcontroller packs Microchips powerful PIC architecture into an 8-pin package. Easily adapted for auto |
Microchip |
1049 |
PIC12C509A |
This powerful (1µsecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit microcontroller packs Microchips powerful PIC architecture into an 8-pin package. Easily adapted for auto |
Microchip |
1050 |
PIC12C671 |
This powerful (400 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit microcontroller packs Microchips powerful PIC architecture into an 8-pin package and features 4 channels |
Microchip |
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