| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
OUTLINE DIMENSIONS |
Toshiba outline dimensions and photos for diodes, rectifiers, silicon-controlled, rectifiers, silicon detectors, CdS photoconductive cells, thermistors |
TOSHIBA |
| 1022 |
OUTLINE DIMENSIONS |
Toshiba outline dimensions and photos for diodes, rectifiers, silicon-controlled, rectifiers, silicon detectors, CdS photoconductive cells, thermistors |
TOSHIBA |
| 1023 |
OUTLINE DIMENSIONS |
Toshiba outline dimensions and photos for diodes, rectifiers, silicon-controlled, rectifiers, silicon detectors, CdS photoconductive cells, thermistors |
TOSHIBA |
| 1024 |
OUTLINE DIMENSIONS |
Toshiba outline dimensions and photos for diodes, rectifiers, silicon-controlled, rectifiers, silicon detectors, CdS photoconductive cells, thermistors |
TOSHIBA |
| 1025 |
OUTLINE DIMENSIONS |
Toshiba outline dimensions and photos for diodes, rectifiers, silicon-controlled, rectifiers, silicon detectors, CdS photoconductive cells, thermistors, DO-7, DO-1, |
TOSHIBA |
| 1026 |
P2750 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1027 |
P2750-06 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1028 |
P2750-08 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1029 |
P3257-30 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1030 |
P3257-31 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1031 |
P3981 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1032 |
P3981-01 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1033 |
PCA82C200 |
STAND-ALONE CAN-CONTROLLER |
Philips |
| 1034 |
PCA82C200P |
STAND-ALONE CAN-CONTROLLER |
Philips |
| 1035 |
PCA82C200T |
STAND-ALONE CAN-CONTROLLER |
Philips |
| 1036 |
PIC12F683 |
The Low Pin-count (8) PIC� Flash microcontroller products offer all of the advantages of the well recognized mid-range x14 architecture with standardized features including a wide operating voltage of 2.0-5.5 volts, on-board EEPROM Data Me |
Microchip |
| 1037 |
PIC16F684 |
The Low Pin-count (14) PIC� Flash microcontroller products offer all of the advantages of the well recognized mid-range x14 architecture with standardized features including a wide operating voltage of 2.0-5.5 volts, on-board EEPROM Data M |
Microchip |
| 1038 |
PIC16F684-I/SLG |
The Low Pin-count (14) PIC® Flash microcontroller products offer all of the advantages of the well recognized mid-range x14 ... |
Microchip |
| 1039 |
PIC16F684-I/STG |
The Low Pin-count (14) PIC® Flash microcontroller products offer all of the advantages of the well recognized mid-range x14 ... |
Microchip |
| 1040 |
PIC16F684T-I/SLG |
The Low Pin-count (14) PIC® Flash microcontroller products offer all of the advantages of the well recognized mid-range x14 ... |
Microchip |
| 1041 |
PIC16F684T-I/STG |
The Low Pin-count (14) PIC® Flash microcontroller products offer all of the advantages of the well recognized mid-range x14 ... |
Microchip |
| 1042 |
PIC16F688 |
The Low Pin-count (14) PIC� Flash microcontroller products offer all of the advantages of the well recognized mid-range x14 architecture with standardized features including a wide operating voltage of 2.0-5.5 volts, on-board EEPROM Data M |
Microchip |
| 1043 |
Q62702-F1129 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1044 |
Q62702-F1587 |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1045 |
Q62702-F1772 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 1046 |
ROB058 |
Quadruple 2-Input positive NAND buffer (with open-collector outputs) |
ICCE |
| 1047 |
S07J |
HEX BUFFERS/DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS |
Texas Instruments |
| 1048 |
S54S22 |
Dual 4-Input positive NAND gate with open-collector outputs |
Signetics |
| 1049 |
S54S22A |
Dual 4-Input positive NAND gate with open-collector outputs |
Signetics |
| 1050 |
S54S22F |
Dual 4-Input positive NAND gate with open-collector outputs |
Signetics |
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