| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2N2368S |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 1022 |
2N2369 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 1023 |
2N2369 |
Silicon transistor for switching applications |
IPRS Baneasa |
| 1024 |
2N2369 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 1025 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 1026 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1027 |
2N2369A |
NPN Transistor RF/IF amplifier |
Amelco Semiconductor |
| 1028 |
2N2369A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1029 |
2N2369A |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 1030 |
2N2369A |
Silicon transistor for switching applications |
IPRS Baneasa |
| 1031 |
2N2369A |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 1032 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
| 1033 |
2N2369A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1034 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1035 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1036 |
2N2369ADCSM |
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
| 1037 |
2N2370 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1038 |
2N2371 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1039 |
2N2372 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1040 |
2N2373 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1041 |
2N2377 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1042 |
2N2377 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 1043 |
2N2378 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1044 |
2N2378 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 1045 |
2N2380A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1046 |
2N2386 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 1047 |
2N2386A |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 1048 |
2N2398 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1049 |
2N2399 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1050 |
2N2400 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
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