| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
APTB1612SGYC |
1.6 x 1.2 mm bi-color SMD chip LED. Super bright green, yellow. Lens type water clear. |
Kingbright Electronic |
| 1022 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1023 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1024 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1025 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 1026 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 1027 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 1028 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 1029 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
| 1030 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 1031 |
BD643 |
8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 1032 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 1033 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 1034 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 1035 |
BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 1036 |
BU323A |
10 A N-P-N monollithic darlington power transistor. 400 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 1037 |
BZX55_C100 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 100 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1038 |
BZX55_C110 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 110 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1039 |
BZX55_C120 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 120 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1040 |
BZX55_C130 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 130 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1041 |
BZX55_C150 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 150 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1042 |
BZX55_C160 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 160 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1043 |
BZX55_C180 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 180 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1044 |
BZX55_C200 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 200 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1045 |
CL-191TLY |
LED of super-luminance. Lighting color top high lemon yellow. Typ. wave length 590 nm. |
CITILED |
| 1046 |
CL-201TLY |
LED of super-luminance. Lighting color top high lemon yellow. Typ. wave length 590 nm. |
CITILED |
| 1047 |
CL-221TLY |
LED of super-luminance. Lighting color top high lemon yellow. Typ. wave length 590 nm. |
CITILED |
| 1048 |
CL-260TLY |
LED of super-luminance. Lighting color top high lemon yellow. Typ. wave length 590 nm. |
CITILED |
| 1049 |
CL-270TLY |
LED of super-luminance. Lighting color top high lemon yellow. Typ. wave length 590 nm. |
CITILED |
| 1050 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
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