| No. |
Part Name |
Description |
Manufacturer |
| 10231 |
GT80J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 10232 |
GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 10233 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10234 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10235 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10236 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10237 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10238 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10239 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10240 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10241 |
GT8J102SM |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 10242 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10243 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10244 |
GT8Q102 |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 10245 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10246 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10247 |
GT8Q102SM |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 10248 |
GWIXP425ABT |
Optimized for Broadband Applications |
Intel |
| 10249 |
GWIXP425ACT |
Optimized for Broadband Applications |
Intel |
| 10250 |
GWIXP425ADT |
Optimized for Broadband Applications |
Intel |
| 10251 |
GWX-15 |
Miniature size for high density applications |
etc |
| 10252 |
GWX-26 |
Miniature size for high density applications |
etc |
| 10253 |
GWX-26/A |
Miniature size for high density applications |
etc |
| 10254 |
GWX-38 |
Miniature size for high density applications |
etc |
| 10255 |
HA22032T |
GaAs MMIC Down Converter for Micro Wave Application |
Hitachi Semiconductor |
| 10256 |
HA22033 |
GaAs MMIC Low Noise Amplifier for Micro Wave Application |
Hitachi Semiconductor |
| 10257 |
HA22039 |
GaAs IC Low Distortion Mixer for Micro Wave Application |
Hitachi Semiconductor |
| 10258 |
HA22040 |
GaAs MMIC Down Converter for Micro Wave Application |
Hitachi Semiconductor |
| 10259 |
HC1E-H-AC120V |
Amber HCE-relay. Miniature relay for wide applications. 1 form C. Coil voltage 120 V AC. Plug-in. Standard type. |
Matsushita Electric Works(Nais) |
| 10260 |
HC1E-H-AC240V |
Amber HCE-relay. Miniature relay for wide applications. 1 form C. Coil voltage 240 V AC. Plug-in. Standard type. |
Matsushita Electric Works(Nais) |
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