No. |
Part Name |
Description |
Manufacturer |
10231 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
10232 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10233 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10234 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
10235 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
10236 |
BU407 |
SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
10237 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
10238 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10239 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
10240 |
BU407H |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
10241 |
BU407HTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10242 |
BU407TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10243 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10244 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
10245 |
BU408 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
10246 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
10247 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
10248 |
BU409 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
10249 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
SGS Thomson Microelectronics |
10250 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
SGS Thomson Microelectronics |
10251 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
ST Microelectronics |
10252 |
BU606 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
10253 |
BU606 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
10254 |
BU606D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
10255 |
BU606D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
10256 |
BU607 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
10257 |
BU607 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
10258 |
BU607D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
10259 |
BU607D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
10260 |
BU608 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
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