No. |
Part Name |
Description |
Manufacturer |
10231 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
10232 |
BD242B |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242B |
SESCOSEM |
10233 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
10234 |
BD242C |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242C |
SESCOSEM |
10235 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
10236 |
BD243A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
10237 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
10238 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
10239 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
10240 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
10241 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
10242 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
10243 |
BD260 |
Silicon MESA NPN transistor, medium power switch and linear amplifier |
SGS-ATES |
10244 |
BD261 |
Silicon MESA NPN transistor, medium power switch and linear amplifier |
SGS-ATES |
10245 |
BD27400GUL |
Analog Input Monaural Class-D Speaker Amplifiers |
ROHM |
10246 |
BD27400GUL-E2 |
Analog Input Monaural Class-D Speaker Amplifiers |
ROHM |
10247 |
BD283 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
10248 |
BD284 |
Silicon EPIBASE PNP Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
10249 |
BD28412MUV |
9W+9W Analog Input Class D Speaker Amplifier |
ROHM |
10250 |
BD28412MUV-E2 |
9W+9W Analog Input Class D Speaker Amplifier |
ROHM |
10251 |
BD285 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
10252 |
BD286 |
Silicon EPIBASE PNP Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
10253 |
BD28623MUV |
17W + 17W Class D Speaker Amplifier for Digital Input |
ROHM |
10254 |
BD28623MUV-E2 |
17W + 17W Class D Speaker Amplifier for Digital Input |
ROHM |
10255 |
BD301 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD302 |
SESCOSEM |
10256 |
BD301 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
10257 |
BD302 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD301 |
SESCOSEM |
10258 |
BD302 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
10259 |
BD303 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD304 |
SESCOSEM |
10260 |
BD303 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
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